In semiconductor industry ion implantation is a common method to dope wafers close to the surface. Due to proprietary development of the method PREMA is capable to implant ions with extremely high energies several µm deep below surfaces. Therefore, complex fabrication techniques can be omitted.

PREMA is offering Ion-Implantation as a service that can be done

• with phosphor, bor and other elements,

• into 4'', 5'', 6'' and 8'' wafers,

• with energies up to 6 MeV,

• up to several µm deep,

• and if necessary structured by using photo lithography.

   

In our semiconductor process other common fabrication techniques are available that can be applied to your wafers as well.