High voltage implantation allows producing different types of photodiodes. They can be combined with integrated circuits, such as transimpedance amplifiers, on the same chip, or the high-resolution lithography can be used to produce arrays of passive photodiodes.
Key features
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low dark current allows use in a wide temperature range
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PN junctions in different depths allow different spectral sensitivities
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all photodiode types available without any extra layers within the bipolar or BiCMOS process
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antireflective coating available as process option
Opto-ASICs
DIFFERENTIAL CENTRE DETECTOR
also suitable as absolute encoder
4-QUADRANT PHOTODIODE
with integrated differential amplifiers
INCREMENTAL ENCODERS
for various applications
Custom-specific-opto-ICs are developed on request. For more information click here.