ModuS U6 - The Advanced Technology, Universal for Analog / Digital ASICs
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		The BiCMOS ModuS U6 technology allows bipolar and CMOS cells on the same chip supporting the design of mixed-signal circuits, thus covering a wide field of applications.  Using high energy implantation (6 MeV and higher) instead of Epi layers and deep N+ diffusions results in a superior BiCMOS technology. It is excellent for demanding analog and mixed-signal circuits, due to the wide range of supply voltages from 1 V up to 80 V, the large current range and high gains, the large number of versatile components, the good noise properties and low offset values, and last but not least the simplified process complexity leading to a manufacturing method of high reproducibility. Through added layers complementary LDMOS transistors with a small on-resistance are available for new circuit designs. PREMA is presently running 150mm (6") and 200mm (8") wafer lines with resolutions down to 250nm. Key features   Leading edge BiCMOS process flow Supply voltages from 1 V up to 80 V Excellent transistor properties from the pA up to the Amp range,   break-down voltages up to 135 V Feasibility of high quality analog and mixed-signal circuits Digital functions in CMOS or compact ultra-low-power CCL logic MIM capacitors short production cycle times Transistors like NMOS, PMOS, DMOS, Super Beta NPNs, p channel JFETs, CCL gates, photodiodes, transistors with integrated Schottky diodes and Super Beta Photo transistors can be easily produced with the ModuS U6 BiCMOS process.