Brochure	The Smart-BCD  technology allows bipolar and CMOS cells on the same chip supporting the design of mixed-signal circuits, thus covering a wide field of applications.  The basis is a fully implanted Smart-BCD technology. It is excellent for demanding analog and mixed-signal circuits, due to the wide range of supply voltages from 1 V up to 80 V, the large current range and high gains, the large number of versatile components, the good noise properties and low offset values, and last but not least the simplified process complexity leading to a manufacturing method of high reproducibility. Through added layers complementary LDMOS transistors with a small on-resistance are available for new circuit designs. PREMA is presently running 150mm (6") and 200mm (8") wafer lines with resolutions down to 250nm.

Key features   Leading edge SMART-BCD process flow Supply voltages from 1 V up to 80 V Excellent transistor properties from the pA up to the Amp range,   break-down voltages up to 135 V Feasibility of high quality analog and mixed-signal circuits Digital functions in CMOS or compact ultra-low-power CCL logic MIM capacitors short production cycle times

The PREMA Smart-BCD process allows to fabricate a large variety of semiconductor devices that a standard BiCMOS technology cannot produce at all or only at high cost, such as NMOS / PMOS / DMOS transistors, super- beta NPN, P-channel JFET, photo diodes, transistors with integrated Schottky diode, super-beta phototransistors, CCL gates, and last but not least
high quality NPN and PNP bipolar transistors.